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Single-transverse-mode InGaAsP-InP edge-emitting bipolar cascade laser

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5 Author(s)
Dross, F. ; Alcatel-Thales III-V Lab., Marcoussis, France ; Van Dijk, F. ; Parillaud, O. ; Vinter, B.
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In order to improve the radio frequency (RF) link gain of opto-RF links, we have designed, fabricated, and characterized a bipolar cascade laser (BCL). It includes two active regions and one highly doped backward-biased tunnel junction. In order to study the intrinsic properties, we have etched a 18-μm-wide deep-ridge. Comparing the result with a similar structure that does not recycle the carriers, we found an increase by a factor of two of the internal quantum efficiency. The same structure was etched into a 2.5-μm-wide shallow ridge laser. We demonstrate a single-transverse-mode edge-emitter 1.55-μm BCL with enhanced external efficiency, paving the way to short term opto-RF system characteristics improvement.

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Quantum Electronics, IEEE Journal of  (Volume:41 ,  Issue: 11 )