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Geometric effect of nickel source on low-temperature polycrystalline silicon TFTs by metal-induced lateral crystallization

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6 Author(s)
Li, J.F. ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore ; Sun, X.W. ; Qi, G.J. ; Sin, J.K.O.
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Low-temperature polycrystalline silicon thin-film transistors were fabricated by nickel-induced lateral crystallization of amorphous silicon. Line and oval-shaped nickel source patterns were compared. The oval-shaped nickel source was found to render better device performance, including lower leakage current and higher on/off current ratio. The observation is interpreted by the crystallization and nickel diffusion behavior. The oval-shaped nickel source introduces less nickel in the channels, which is the physical mechanism responsible for the improved performance.

Published in:

Electron Device Letters, IEEE  (Volume:26 ,  Issue: 11 )