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Integrated high-/spl kappa/ (/spl kappa/ /spl sim/19) MIM capacitor with Cu/low-/spl kappa/ interconnects for RF application

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10 Author(s)
Yu, M.B. ; Inst. of Microelectron., Singapore, Singapore ; Yong Zhong Xiong ; Sun-Jung Kim ; Balakumar, S.
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We demonstrate a high-performance metal-high /spl kappa/ insulator-metal (MIM) capacitor integrated with a Cu/low-/spl kappa/ backend interconnection. The high-/spl kappa/ used was laminated HfO2-Al2O3 with effective /spl kappa/ /spl sim/19 and the low-/spl kappa/ dielectric used was Black Diamond with /spl kappa/ /spl sim/2.9. The MIM capacitor (/spl sim/13.4 fF/μm2) achieved a Q-factor /spl sim/53 at 2.5 GHz and 11.7 pF. The resonant frequency f/sub r/ was 21% higher in comparison to an equivalently integrated Si3N4-MIM capacitor (/spl sim/0.93 fF/μm2) having similar capacitance 11.2 pF. The impacts of high-/spl kappa/ insulator and low-/spl kappa/ interconnect dielectric on the mechanism for resonant frequency improvement are distinguished using equivalent circuit analysis. This letter suggests that integrated high-/spl kappa/ MIM could be a promising alternative capacitor structure for future high-performance RF applications.

Published in:

Electron Device Letters, IEEE  (Volume:26 ,  Issue: 11 )