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Improved device performance and reliability in high κ HfTaTiO gate dielectric with TaN gate electrode

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4 Author(s)
Lu, N. ; Microelectron. Res. Center, Univ. of Texas, Austin, TX, USA ; Li, H.J. ; Gardner, M. ; Kwong, D.L.

The device performance and reliability of higher-κ HfTaTiO gate dielectrics have been investigated in this letter. HfTaTiO dielectrics have been reported to have a high-κ value of 56 and acceptable barrier height relative to Si (1.0 eV). Through process optimization, an ultrathin equivalent oxide thickness (EOT) (∼9 Å) has been achieved. HfTaTiO nMOSFET characteristics have been studied as well. The peak mobility of HfTaTiO is 50% higher than that of HfO2 and its high field mobility is comparable to that of HfSiON with an intentionally grown SiO2 interface, indicative of superior quality of the interface and bulk dielectric. In addition, HfTaTiO dielectric has a reduced stress-induced leakage current (SILC) and improved breakdown voltage compared to HfO2 dielectric.

Published in:

Electron Device Letters, IEEE  (Volume:26 ,  Issue: 11 )

Date of Publication:

Nov. 2005

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