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Increasing the extraction efficiency of AlGaInP LEDs via n-side surface roughening

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7 Author(s)
Lee, Y.J. ; Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Kuo, H.C. ; Wang, S.C. ; Hsu, T.C.
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An n-side-up AlGaInP-based light-emitting diode (LED) with a triangle-like surface morphology was fabricated using the adhesive layer bonding technique, followed by wet etching to roughen the surface. The light output power of the roughened-surface LED was 1.6 times higher than that of a flat-surface LED at an injection current of 20 mA, i.e., a significant improvement attributed to the ability of the roughened surface to not only reduce the internal reflection between the rear mirror system and the semiconductor-air interface, but also to effectively scatter the light outside the LED device.

Published in:

Photonics Technology Letters, IEEE  (Volume:17 ,  Issue: 11 )