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A new optoelectronic integrated circuit (OEIC) with high opto-switching photocurrent has been developed by using the structure integrated by a poly-SiGe:H alloy pin and tungsten trioxide (WO3) electro-chromic device. This colour change will degrade the absorption of light with wavelength larger than blue colour. Under 100 μW IR-LED incident (with peak wave length at 750 nm) and at 5 V biased voltage, the optical density change (ΔOD), colouration efficiency (in cm2/C), and the response time (in μs) of the pin-poly-SiGe:H/WO3 opto-switching sensor will be improved dramatically by 340%, sixfold, and 170%, respectively, compared with the traditional pin-SiGe:H and WO3 film by oxygen deficiency and polycrystalline stoichiometry. These IR-sensing trials demonstrated again that the proposed poly-SiGe:H pin electrochromic technology has very useful application in the switching OEIC field of low cost and resource conservation.