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Ultra-compact 350 GHz gain-bandwidth product 40 Gbit/s predriver IC in SiGe bipolar technology

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5 Author(s)
Schick, C. ; Dept. of Electron Devices & Circuits, Univ. of Ulm, Germany ; Weiss, H. ; Hernandez-Guillen, F. ; Trasser, A.
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An ultra-compact 0.36 mm2 differential wideband amplifier fabricated using SiGe technology is presented. Measurements show an on-wafer gain of 20.8 dB and a 3 dB cutoff frequency of 32.0 GHz. The mounted amplifier's gain is 19.5 dB. The circuit is intended to operate as a predriver in a 40 Gbit/s fibre-optic communication system.

Published in:

Electronics Letters  (Volume:41 ,  Issue: 20 )