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Browse Journals & Magazines > Electronics Letters ...> Volume:41 Issue:20 Help

Ultra-compact 350 GHz gain-bandwidth product 40 Gbit/s predriver IC in SiGe bipolar technology

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5 Author(s)
Schick, C. ; Dept. of Electron Devices & Circuits, Univ. of Ulm, Germany ; Weiss, H. ; Hernandez-Guillen, F. ; Trasser, A.
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An ultra-compact 0.36 mm2 differential wideband amplifier fabricated using SiGe technology is presented. Measurements show an on-wafer gain of 20.8 dB and a 3 dB cutoff frequency of 32.0 GHz. The mounted amplifier's gain is 19.5 dB. The circuit is intended to operate as a predriver in a 40 Gbit/s fibre-optic communication system.

Published in:
Electronics Letters  (Volume:41 ,  Issue: 20 )

Date of Publication: 29 Sept. 2005

Page(s):
1116 - 1118
ISSN :
0013-5194
INSPEC Accession Number:
8607985
Digital Object Identifier :
10.1049/el:20052720
Product Type:
Journals & Magazines
Date of Current Version :
24 October 2005
Issue Date :
29 Sept. 2005
Sponsored by :
Institution of Engineering and Technology

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