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Cooling performance of silicon-based thermoelectric device on high power LED

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4 Author(s)
Jen-Hau Cheng ; Industrial Technol. Res. Inst., Electronics Res. & Service Organ., Hsingchu, Taiwan ; Chun-Kai Liu ; Yu-Lin Chao ; Ra-Min Tain

In this paper, a new thermal management application of silicon-based thermoelectric (TE) device on high power LED is unveiled. The silicon-based TE device is fabricated by the microfabrication and flip-chip assembly process. Thermal images photographed by infrared camera demonstrate the cooling function of the silicon-based TE devices. Because the LED chip is encapsulated in a package, the junction temperature of the LED chip cannot be measured directly. An electrical-thermal conversion method is used to measure the junction temperature of the high power LED. The result shows that the silicon-based thermoelectric device can effectively reduce the thermal resistance of the high power LED.

Published in:

ICT 2005. 24th International Conference on Thermoelectrics, 2005.

Date of Conference:

19-23 June 2005