By Topic

B-concentration dependence on anisotropy field of CoFeB thin film for gigahertz frequency use

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Munakata, Makoto ; Energy Electron. Lab., Sojo Univ., Kumamoto, Japan ; Shin-Ichi Aoqui ; Yagi, M.

B was added to the high moment CoFe thin films (Co35Fe65, Co25Fe75, and Co15Fe85) using synchronous triple-RF magnetron sputtering to obtain the films with large anisotropy fields greater than 500 Oe. These films required inductor core materials operating at the frequencies of several gigahertz. Magnetic properties and the crystalline structure of the CoFeB films were investigated. It was found that the B addition increased the anisotropy field to 400-700 Oe and that the increase in anisotropy field was associated with changes in the crystalline structure, crystallite sizes, and crystallite orientation. The results indicated that CoFeB films have potential for use in magnetic cores and inductors operating at gigahertz frequencies.

Published in:

Magnetics, IEEE Transactions on  (Volume:41 ,  Issue: 10 )