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Low resistance and enhanced thermal and electrical stability of the magnetic tunnel junction with a Ti-alloyed Al-oxide barrier

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3 Author(s)
Jin-Oh Song ; Div. of Mater. Sci. & Eng., Korea Univ., Seoul, South Korea ; Seong-Rae Lee ; Hyun-Joon Shin

We developed a new Ti-alloyed Al-oxide (TiAlOx) as an insulating barrier for magnetic tunnel junction (MTJ) that has a lower resistance × area (RA) value and bandgap than when Al-oxide is used. The RA value of the MTJs dropped from 9.5 to 0.69 MΩ μm2 as the Ti concentration increased to 5.33 at.%. The lower RA value of the MTJs resulted from the bandgap reduction; the extra bands were composed mainly of Ti-3d orbitals in the bandgap. In addition, a significant tunneling magnetoresistance (TMR) value of 20% was maintained after annealing at 450°C and a higher bias voltage (Vh) and breakdown voltage (VB) of 681 mV and 1.35 V, respectively, were obtained in the MTJs with a 5.33 at.% TiAlOx barrier. These results were closely related to the enhanced microstructural and interfacial quality of the Ti-Al alloy film in the preoxidation state.

Published in:

IEEE Transactions on Magnetics  (Volume:41 ,  Issue: 10 )