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Edge domain dependent pinning effect by stray field in patterned magnetic tunnel junction

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8 Author(s)
Shimomura, N. ; Corp. Res. Dev. Center, Toshiba Corp., Kawasaki, Japan ; Kishi, T. ; Yoshikawa, M. ; Kitagawa, E.
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The mechanism of pinning of domain walls in patterned magnetic tunnel junctions (MTJs) during magnetization switching was investigated. The stray field from the pinned layer localized in the edge domain causes this pinning effect. This pinning occurs only when the cell has C-type edge domains. The switching process is simulated by Landau-Lifshitz-Gilbert equation. It is also studied by fabricating the MTJ cells with a different pinned layer to examine the effect of the stray field from the pinned layer.

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Magnetics, IEEE Transactions on  (Volume:41 ,  Issue: 10 )