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Magnetic tunnel junctions (MTJs) with amorphous CoFeB and Co2MnSi electrodes were fabricated and examined. In the case of [Co90Fe10]100-xBx, the x=32% boron addition reduces the magnetization by 30% compared to Co90Fe10, yet the reduction of the tunnel magnetoresistance (TMR) is over 95%. On the contrary, in the case of Co(100-x-y)MnxSiy, although net magnetization is very small at room temperature, the TMR can be as large as 7%. The character of each metalloid (boron and silicon) could be responsible for the peculiar behavior to each system.