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High tunnel magnetoresistance in epitaxial Co2Cr0.6Fe0.4Al/MgO/CoFe tunnel junctions

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5 Author(s)
Marukame, T. ; Graduate Sch. of Inf. Sci. & Technol., Hokkaido Univ., Sapporo, Japan ; Kasahara, T. ; Matsuda, K.-I. ; Uemura, T.
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We have fabricated fully epitaxial magnetic tunnel junctions (MTJs) using a Co-based full-Heusler alloy Co2Cr0.6Fe0.4Al (CCFA) thin film and an MgO tunnel barrier. The CCFA thin film for the lower ferromagnetic electrode was deposited by magnetron sputtering on an MgO-buffered MgO single-crystal substrate, and the MgO tunnel barrier was formed by electron beam evaporation. The microfabricated epitaxial CCFA/MgO/CoFe MTJs showed high tunnel magnetoresistance ratios of 42% at room temperature and 74% at 55K.

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Magnetics, IEEE Transactions on  (Volume:41 ,  Issue: 10 )