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Silicon carbide power semiconductor module development for a high temperature 10 kW AC drive

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7 Author(s)
Katsis, D. ; US Army Res. Lab., Adelphi, MD, USA ; Geil, B. ; Griffin, T. ; Koebke, G.
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A silicon carbide power module has been developed to demonstrate a high-temperature, 10 kW AC drive application. Several goals for this development include temperature dependent parameter evaluation of parallel-connected transistors and junction barrier Schottky diodes at 150 °C operating temperature. Next, design of a high-thermal conductivity substrate to cool the modules based on predicted losses. Finally the integration into a variable speed AC drive using a DSP-based V/F motor controller. Test results for the 10 kW AC drive are provided to demonstrate power module performance up to 180 °C.

Published in:

Industry Applications Conference, 2005. Fourtieth IAS Annual Meeting. Conference Record of the 2005  (Volume:1 )

Date of Conference:

2-6 Oct. 2005