Cart (Loading....) | Create Account
Close category search window

High-temperature silicon carbide (SiC) power switches in multichip power module (MCPM) applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Homberger, J.M. ; Arkansas Power Electron. Int. Inc., Fayetteville, AR, USA ; Mounce, S.D. ; Schupbach, R.M. ; Lostetter, A.B.
more authors

Arkansas Power Electronics International, Inc, (APEI, Inc.) and University of Arkansas researchers have developed a novel, highly miniaturized motor drive capable of operation in excess of 250 °C. The high-temperature multichip power module (MCPM) integrates silicon carbide (SiC) JFET power transistors with high-temperature MOS silicon-on-insulator (SOI) control electronics into a single, highly miniaturized and compact power package. This paper will outline the design philosophy behind the high-temperature MCPM, illustrate thermal modeling results of the package, and present the results of prototype testing (demonstrating functionality).

Published in:

Industry Applications Conference, 2005. Fourtieth IAS Annual Meeting. Conference Record of the 2005  (Volume:1 )

Date of Conference:

2-6 Oct. 2005

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.