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High-temperature silicon carbide (SiC) power switches in multichip power module (MCPM) applications

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5 Author(s)
Homberger, J.M. ; Arkansas Power Electron. Int. Inc., Fayetteville, AR, USA ; Mounce, S.D. ; Schupbach, R.M. ; Lostetter, A.B.
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Arkansas Power Electronics International, Inc, (APEI, Inc.) and University of Arkansas researchers have developed a novel, highly miniaturized motor drive capable of operation in excess of 250 °C. The high-temperature multichip power module (MCPM) integrates silicon carbide (SiC) JFET power transistors with high-temperature MOS silicon-on-insulator (SOI) control electronics into a single, highly miniaturized and compact power package. This paper will outline the design philosophy behind the high-temperature MCPM, illustrate thermal modeling results of the package, and present the results of prototype testing (demonstrating functionality).

Published in:

Industry Applications Conference, 2005. Fourtieth IAS Annual Meeting. Conference Record of the 2005  (Volume:1 )

Date of Conference:

2-6 Oct. 2005

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