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Spontaneous recombination lifetime in compressively strained InGaAs quantum well lasers with InGaAsP and GaAs barrier/waveguide layers

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2 Author(s)

Spontaneous carrier recombination lifetime increases with indium content in compressively strained InGaAs quantum well lasers grown on GaAs. It also becomes longer in lasers with wider bandgap InGaAsP barrier/waveguide layers by replacing the GaAs ones.

Published in:

Indium Phosphide and Related Materials, 2005. International Conference on

Date of Conference:

8-12 May 2005