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100-GHz optoelectronic integrated circuits using InP HBTs and a UTC-PD

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8 Author(s)
N. Kashio ; NTT Photonics Lab., NTT Corp., Kanagawa ; K. Kurishima ; K. Sano ; M. Ida
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Optoelectronic integrated circuits (OEICs) using InP double-heterojunction bipolar transistors (InP DHBTs) and a uni-traveling-carrier photodiode (UTC-PD) have been fabricated by a non-selective regrowth technique. We have successfully demonstrated 100-GHz operation of an optical-clock frequency-divider OEIC

Published in:

International Conference on Indium Phosphide and Related Materials, 2005

Date of Conference:

8-12 May 2005