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100-GHz optoelectronic integrated circuits using InP HBTs and a UTC-PD

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8 Author(s)
Kashio, N. ; NTT Photonics Lab., NTT Corp., Kanagawa ; Kurishima, K. ; Sano, K. ; Ida, M.
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Optoelectronic integrated circuits (OEICs) using InP double-heterojunction bipolar transistors (InP DHBTs) and a uni-traveling-carrier photodiode (UTC-PD) have been fabricated by a non-selective regrowth technique. We have successfully demonstrated 100-GHz operation of an optical-clock frequency-divider OEIC

Published in:

Indium Phosphide and Related Materials, 2005. International Conference on

Date of Conference:

8-12 May 2005