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Growth-temperature-dependent bandgap of MBE-grown GaInNAs epilayers lattice matched to GaAs

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8 Author(s)
Pavelescu, E.-M. ; Optoelectron. Res. Centre, Tampere Univ. of Technol. ; Wagner, J. ; Kudrawiec R ; Dumitrescu, M.
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We have observed that the bandgap of lattice-matched GaInNAs-on-GaAs epilayers, grown by molecular beam epitaxy under constant fluxes, noticeably increases as growth temperature increases within the 410-470degC range. The increase in the band gap with increasing growth temperature has been found to be due to a decrease in the substitutional nitrogen content as well as to an enhancement in the amount of N-Ga3In clusters relative to the N-Ga4 ones

Published in:

Indium Phosphide and Related Materials, 2005. International Conference on

Date of Conference:

8-12 May 2005