Referenced Items are not available for this document.
The photoluminescence (PL) intensity of InAs quantum dots (QDs), of which wavelength is 1.3 mum at room temperature, has been significantly enhanced by introducing p-type modulation doping and optimizing of the spacer thickness
Published in:
Indium Phosphide and Related Materials, 2005. International Conference on
Date of Conference: 8-12 May 2005
- Page(s):
- 537 - 539
- ISSN :
- 1092-8669
- Print ISBN:
- 0-7803-8891-7
- INSPEC Accession Number:
- 9044855
- Conference Location :
- Glasgow, Scotland
- Digital Object Identifier :
- 10.1109/ICIPRM.2005.1517552
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