By Topic

Enhanced photoluminescence intensity in modulation doped p-InAs quantum dots grown by molecular beam epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
N. Kumagai ; Nanoelectron. Collaborative Res. Center, Tokyo Univ. ; K. Watanabe ; S. Tsukamoto ; Y. Arakawa

The photoluminescence (PL) intensity of InAs quantum dots (QDs), of which wavelength is 1.3 mum at room temperature, has been significantly enhanced by introducing p-type modulation doping and optimizing of the spacer thickness

Published in:

International Conference on Indium Phosphide and Related Materials, 2005

Date of Conference:

8-12 May 2005