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Low noise W-band MMMIC amplifier using 50nm InP technology for millimeterwave receivers applications

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4 Author(s)
K. Elgaid ; Dept. of Electron. & Electr. Eng., Glasgow Univ. ; H. McLelland ; C. R. Stariley ; I. G. Thayne

We report on W-band LNA (MMMICs) based around a 50nm InP-HEMTs with an fT of 0.550 THz. The LNA noise figure is 2.5 dB and associated gain of 7.3 dB at 90 GHz with a bandwidth of 24 GHz

Published in:

International Conference on Indium Phosphide and Related Materials, 2005

Date of Conference:

8-12 May 2005