Scheduled System Maintenance:
Some services will be unavailable Sunday, March 29th through Monday, March 30th. We apologize for the inconvenience.
By Topic

Degradation mechanism and reliability improvement of InGaAs/InAlAs/InP HEMTs using new gate metal electrode technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Chou, Y.C. ; Northrop Grumman Space Technol., Redondo Beach, CA, USA ; Grundbacher, R. ; Leung, D. ; Lai, R.
more authors

The degradation mechanism of 0.1 μm InGaAs/InAlAs/InP HEMTs subjected to elevated temperature lifetest has been resolved with the techniques of scanning transmission microscope (STEM) and high-resolution energy-dispersive X-ray analysis (EDX). The results show that Schottky junction degradation is the dominant degradation mechanism, consisting of Ti inter-diffusion and In0.52Al0.48As Schottky barrier layer degradation. The degradation of the In0.52Al0.48As Schottky barrier exhibits the formation of TiAsx and indium-rich In0.52+xAl0.48As and/or indium depleted In0.52-xAl0.48As under elevated temperature lifetest. The Schottky junction degradation mechanism can be alleviated by using a new gate metal electrode technology (NGMET), which exhibits superior reliability performance to that of the Ti/Pt/Au gate metal electrode. Moreover, InP HEMT MMICs using NGMET exhibit comparable RF performance to that of InP HEMT MMICs with Ti/Pt/Au gate metal. The results achieved here demonstrate the further enhancement of 0.1 μm InP HEMT MMIC technology at Northrop Grumman Space Technology (NGST) using NGMET for military/space applications with high reliability performance requirement.

Published in:

Indium Phosphide and Related Materials, 2005. International Conference on

Date of Conference:

8-12 May 2005