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Low leakage current and high dielectric constant LPD-SiO2/MOCVD-TiO2 film grown on (NH4)2Sx, treated InP substrate

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3 Author(s)
Ming-Kwei Lee ; Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan ; Jung-Jie Huang ; Yen, Chih-Feng

The electrical characteristics of fluorinated silicon dioxide/titanium oxide films on ammonium sulfide treated InP were investigated. The leakage current is 1.45×10-7 A/cm2 under the electrical field at 1.5 MV/cm and the dielectric constant is 61.2.

Published in:

Indium Phosphide and Related Materials, 2005. International Conference on

Date of Conference:

8-12 May 2005