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Low noise high performance 50nm T-gate metamorphic HEMT with cut-off frequency fT of 440 GHz for millimeterwave imaging receivers applications

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5 Author(s)
Elgaid, K. ; Dept. of Electron. & Electr. Eng., Glasgow Univ., UK ; Moran, D. ; McLelland, H. ; Holland, M.
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The 50 nm m-HEMT exhibits extremely high fT, of 440GHz, low Fmin of 0.7 dB, associated gain of 13 dB at 26 GHz with an exceptionally high Id of 200 mA/mm and gm of 950 ms/mm at low noise biased point.

Published in:

Indium Phosphide and Related Materials, 2005. International Conference on

Date of Conference:

8-12 May 2005