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InGaAs-InAlAs-InP HEMT technology for ultra-high frequency and ultra-low noise performance

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8 Author(s)
Grahn, J. ; Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden ; Starski, P. ; Malmkvist, M. ; Fridman, M.
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InGaAs-InAlAs-InP HEMT is facing competition from the emerging MHEMT technology. Nonetheless, for top-performing applications requiring high gain and low noise, InP HEMT is still the preferred choice. We here present results from InP HEMT development for sub-100 nm gate length designs yielding fmax above 400 GHz and ultra-low noise hybrid amplifiers with a minimum noise temperature of 1.1 K when operated under cryogenic conditions.

Published in:
Indium Phosphide and Related Materials, 2005. International Conference on

Date of Conference: 8-12 May 2005

Page(s):
124 - 128
ISSN :
1092-8669
Print ISBN:
0-7803-8891-7
INSPEC Accession Number:
8624697
Digital Object Identifier :
10.1109/ICIPRM.2005.1517435
Product Type:
Conference Publications

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