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InGaAs-InAlAs-InP HEMT is facing competition from the emerging MHEMT technology. Nonetheless, for top-performing applications requiring high gain and low noise, InP HEMT is still the preferred choice. We here present results from InP HEMT development for sub-100 nm gate length designs yielding fmax above 400 GHz and ultra-low noise hybrid amplifiers with a minimum noise temperature of 1.1 K when operated under cryogenic conditions.
Date of Conference: 8-12 May 2005