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Highest density 1.3 μm InAs quantum dots covered with gradient composition InGaAs SRL grown with an As2 source using molecular beam epitaxy

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3 Author(s)
Amano, T. ; Japan Sci. & Technol., Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan ; Sugaya, T. ; Komori, K.

We propose a GaAs-based 1.3 μm InAs quantum dot (QD) structure for optical devices that uses a novel gradient composition strain reducing layer (GC-SRL) and dimeric arsenic (As2). Our proposed GC-SRL has a big advantage, such as reducing critical strain. We calculate the critical thickness of InGaAs GC-SRL for several In compositions. Also, The characteristics of 1.3 μm InAs QDs that employ AS2 are different from those of QDs that use AS4. Our optimum structure exhibits the first room temperature emission of over 1.3 μm with a linewidth of 22 meV and a high density of over 1.1×1011 cm-2 using only a GC-SRL. We were also able to achieve a very high density of 3.3× 1011 cm-2 and a full width at half maximum of 23 meV for a triple-stack structure within the critical thickness. This result is promising as regards achieving a semiconductor laser and the other optical devices with QDs of over 1.3 μm on a GaAs substrate for use in fiber communications.

Published in:

Indium Phosphide and Related Materials, 2005. International Conference on

Date of Conference:

8-12 May 2005