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Design and modelling of a III/V mobile-gate with optical input on a silicon substrate

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16 Author(s)
Prost, W. ; Center for Semicond. & Optoelectronics, Duisburg Univ., Germany ; Kelly, P. ; Guttzeit, A. ; Khorenko, V.
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The co-integration of III/V devices such as InGaAsP PIN diode and an (In)AlAs/In(Ga)As Resonant Tunnelling Diodes with state-of-the-art silicon NMOS transistors is studied. The III/V devices layers are epitaxially grown and fabricated on silicon substrates for the extraction of model parameters. The performance of a potentially low-cost optical receiver circuit on silicon is simulated using HSPICE up to 10 Gb/s.

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Indium Phosphide and Related Materials, 2005. International Conference on

Date of Conference:

8-12 May 2005

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