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A miniature dual-band low-noise amplifier module for IEEE 802.11 b/g/a WLAN applications

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6 Author(s)
Chow, Y.H. ; WSD R&D, Agilent Technol., Penang, Malaysia ; Chong, T. ; Hasan, Z. ; Loh, C.C.
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This paper describes the design and implementation of a low-noise amplifier module in a single package that is capable of operating in both the 2.4 GHz band and the (4.9-6) GHz band. The module utilizes a MMIC fabricated using Agilent's proprietary low-noise enhancement-mode pHEMT process. A cascode configuration is used to obtain high gain and low currents for the 2.4 GHz band amplifier whilst a two-stage amplifier is used in the 5 GHz band. In the 2.45 GHz band, gain is 17 dB at 14 mA current with 0.9 dB of noise figure. In the 5 GHz band, gain is (22-24)dB at 22 mA and 1.5 dB average noise figure. Input P1dB is -5.5 dBm for the 2.4GHz LNA and typically -14 dBm for the 5 GHz LNA. IIP3 is +5.5 dBm for the 2.4 GHz LNA and typically -2dBm for the 5GHz band. The complete design uses only one RF input matching component external to the MMIC inside the module. The complete LNA is housed in a 3mm × 3mm molded chip-on-board package and requires only two external bypass capacitors in actual operation.

Published in:

Microwave Symposium Digest, 2005 IEEE MTT-S International

Date of Conference:

12-17 June 2005

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