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Analytical noise model for bipolar transistors, based on π-hybrid equivalent circuit is verified on AIIIBv HBTs. Equivalent circuit model parameters are obtained from detailed analysis of HICUM compact model. Since, new analytical model enables the evaluation of noise parameters just using external de-embedded y-parameters, obtained noise parameters are compared to those simulated with HICUM, and to other well known analytical noise equations. Good agreement over a wide range of measured noise parameters proves the model validity for the investigated AIIIBv HBTs and enables a correct extraction of noise delay time, which is associated with base and base/collector space charge region transit time and determines the correlation between base and collector current shot noise.