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Diamond for high power electronics

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3 Author(s)
Kohn, E. ; Dept. of Electron Devices & Circuits, Ulm Univ., Germany ; Kusterer, J. ; Denisenko, A.

The current status and perspective of diamond as wide bandgap semiconductor in microwave power and high temperature electronics is reviewed. Predicted RF power densities above 50 W/mm and diode operation above 1000 °C characterize this extraordinary material. In addition, the properties predistine diamond films also for RF MEMS. A bi-stable in-line switch is discussed.

Published in:

Microwave Symposium Digest, 2005 IEEE MTT-S International

Date of Conference:

12-17 June 2005