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This paper reports on the investigation of the kinetic of the dielectric charging in capacitive RF-MEMS through an original method of stress and monitoring. This effect has been investigated through a new parameter that is the shift rate of the actuation voltages (SRAV). We demonstrate that this lifetime parameter has to be considered as a function of the applied voltage normalized by a factor which takes the contact quality between the bridge and the dielectric into account. We also demonstrate that this phenomenon is related to Frenkel-Poole conduction which takes place into the dielectric. We finally propose a model which describes the dielectric charging kinetic in capacitive RF MEMS.