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A high efficiency, high voltage, balanced cascode FET

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5 Author(s)
A. Inoue ; High Frequency & Opt. Device Works, Mitsubishi Electr. Corp., Hyogo, Japan ; S. Goto ; T. Kunii ; T. Ishikawa
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A high efficiency, high operating voltage GaAs HFET is presented. A balanced cascode circuit without RF feedback, which achieves the high PAE of 78.2% at 2.1GHz, is proposed. The optimization of a balance capacitor is analyzed theoretically and proved experimentally. This result contributes to the design of high voltage power amplifiers with low breakdown voltage transistors.

Published in:

IEEE MTT-S International Microwave Symposium Digest, 2005.

Date of Conference:

12-17 June 2005