By Topic

Microwave planar capacitors employing low loss, high-K, and tunable BZN thin films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
J. Park ; Mater. Dept., California Univ., Santa Barbara, CA, USA ; J. Lut ; S. Stemmert ; R. A. York

Planar capacitors having high Q factor and tunability were implemented with cubic pyrochlore Bi1.5Zn1.0Nb1.5O7 (BZN) thin films deposited by RF magnetron sputtering. Device Q factors (QDUT) and capacitances (CDUT) were measured using reflection coefficients based on vector network analyzers on Vycor glass and sapphire substrates, respectively. Q factors (Qint) accounting for electrode and dielectric losses remained above 200 up to 20 GHz and around 1000 up to several GHz for the smaller devices on sapphire substrate and there was no sign of onset of dielectric relaxations. With the electric field dependent permittivity, the BZN thin films can be the alternative to conventional BST thin films.

Published in:

IEEE MTT-S International Microwave Symposium Digest, 2005.

Date of Conference:

12-17 June 2005