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Planar capacitors having high Q factor and tunability were implemented with cubic pyrochlore Bi1.5Zn1.0Nb1.5O7 (BZN) thin films deposited by RF magnetron sputtering. Device Q factors (QDUT) and capacitances (CDUT) were measured using reflection coefficients based on vector network analyzers on Vycor glass and sapphire substrates, respectively. Q factors (Qint) accounting for electrode and dielectric losses remained above 200 up to 20 GHz and around 1000 up to several GHz for the smaller devices on sapphire substrate and there was no sign of onset of dielectric relaxations. With the electric field dependent permittivity, the BZN thin films can be the alternative to conventional BST thin films.