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A poly-Si gate carbon nanotube field effect transistor for high frequency applications

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6 Author(s)
Sunkook Kim ; Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA ; Tae-Young Choi ; Laleh Rabieirad ; Jong-Hyeok Jeon
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We are reporting a novel carbon nanotube field effect transistor with a poly-Si bottom gate structure. The device has a gate length of 3μm and achieves a unity gain frequency fT of 2.5GHz and a maximum oscillation frequency fmax of >5GHz. The high frequency performance of the device is attributed to the ballistic transport of electrons inside the nanotube and is expected to improve by reducing the gate length.

Published in:

Microwave Symposium Digest, 2005 IEEE MTT-S International

Date of Conference:

12-17 June 2005

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