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Attenuation compensation techniques in distributed SiGe HBT amplifiers using highly lossy thin film microstrip lines

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6 Author(s)
Schick, C. ; Dept. of Electron Devices & Circuits, Ulm Univ., Germany ; Feger, T. ; Soenmez, E. ; Schad, K.-B.
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A compact 1.3 mm × 0.83 mm SiGe distributed wideband amplifier is presented. The design utilizes highly lossy thin film microstrip transmission line elements. Attenuation compensation methods for extending the amplifier's bandwidth are discussed. Amplifier small-signal gain is 10.5 dB, upper 3 dB cut-off frequency is 41 GHz. Low group delay variations of 21 ps within the bandwidth qualify this amplifier for operation in a 40 Gbit/s fibre-optic communication system.

Published in:

Microwave Symposium Digest, 2005 IEEE MTT-S International

Date of Conference:

12-17 June 2005