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A millimeter-wave wideband SPDT switch with traveling-wave concept using 0.13-μm CMOS process

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5 Author(s)
Mei-Chao Yeh ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Zuo-Min Tsai ; Kim-You Lin ; Huei Wang
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A wideband SPDT switch in standard bulk 0.13-μm CMOS process is demonstrated in this paper. In order to extend the operation frequency, the traveling-wave circuit topology is utilized. Due to the different requirements in transmit and receive paths, the switch is designed to be asymmetric. In the receive path, the switch achieves a measured insertion loss less than 2.7 dB, a measured isolation better than 26 dB from 27 to 50 GHz. On the other hand, for the transmit path, the switch also achieves a measured insertion loss less than 4.4 dB, and an isolation better than 14 dB from 30 to 63 GHz. At 40 GHz, a measured input P1dB of 13.8 dBm is attained. The chip size is only 0.8 × 0.5 mm2. The measured data agree with the simulation results well. To our knowledge, this work is the first CMOS switch in millimeter-wave frequency range.

Published in:

Microwave Symposium Digest, 2005 IEEE MTT-S International

Date of Conference:

12-17 June 2005