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Ultrahigh-aspect-ratio Si and SiO2 deeply-etched periodic structures with extremely smooth surfaces for photonics applications

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6 Author(s)
Hosomi, K. ; Inst. of Industrial Sci., Tokyo Univ., Japan ; Yamada, H. ; Kikawa, T. ; Goto, S.
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One-dimensional deeply-etched periodic Si and SiO2 structures were fabricated and had excellent vertical profiles (< 0.5 deg.), ultrahigh aspect ratios (∼ 80) and large etch depths (∼ 20 μm). Low scattering optical loss can be expected by their extremely smooth surfaces.

Published in:

Group IV Photonics, 2005. 2nd IEEE International Conference on

Date of Conference:

21-23 Sept. 2005

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