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Photoluminescence of SiGe/Si(001) self-assembled islands grown on strained Si1-xGex layer

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6 Author(s)
D. N. Lobanov ; Inst. of Phys. of Microstructures, Russian Acad. Sci., Nizhny Novgorod, Russia ; A. V. Novikov ; M. V. Shaleev ; Yu. N. Drozdov
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Photoluminescence (PL) of SiGe/Si(001) self-assembled islands grown on a strained Si1-xGex layer (x≤20%) has been investigated. PL signal from the islands with different shapes and the nonlinear dependence of the intensity of the PL signal from the islands at room temperature on composition of the GeSi layer have been observed.

Published in:

IEEE International Conference on Group IV Photonics, 2005. 2nd

Date of Conference:

21-23 Sept. 2005