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Growth and characterization of strain-symmetried Si/SiGe THz quantum cascade structures

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7 Author(s)
M. Zhao ; Dept. of Phys., Linkoping Univ., Sweden ; W. -X. Ni ; P. Townsend ; S. A. Lynch
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This study presents the growth of strain-symmetric Si/SiGe THz quantum cascade structures on virtual substrates with precise layer parameters, thick active region, and high material quality. Sample characterization is done using atomic force microscopy, high resolution X-ray diffraction, and transmission electron microscopy.

Published in:

IEEE International Conference on Group IV Photonics, 2005. 2nd

Date of Conference:

21-23 Sept. 2005