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On the development of CAD techniques suitable for the design of high-power RF transistors

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3 Author(s)
P. H. Aaen ; RF Div., Freescale Semicond. Inc., Phoenix, AZ, USA ; J. A. Pla ; C. A. Balanis

A full-wave modeling procedure was developed to simulate the package, bonding wires, and MOS capacitors used in the design of matching networks found within RF/microwave power transistors. The complex packaging environment was segmented into its constituent components and simulation techniques were developed for each component, as well as the inter-element coupling. An S-parameter test fixture and package was developed that permits measurements of these types of devices. The simulation and measurement procedures were used to model various circuits. Measured S-parameters and those obtained using the full-wave methodology were in good agreement. Simulation results using an inductance-only bonding-wire model were performed and differences between the S-parameters were observed. A detailed examination of the loss introduced by the matching network was performed and simulations and measurements matched closely.

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:53 ,  Issue: 10 )