Cart (Loading....) | Create Account
Close category search window
 

Magnetic remanent memory structures for dynamically reconfigurable FPGA

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Bruchon, N. ; LIRMM, Montpeilier Univ., France ; Cambon, G. ; Torres, L. ; Sassatelli, G.

Emergent technologies such as magnetic tunneling junction (MTJ), used in MRAM design are compatible with CMOS conventional processes and can be used in configurable circuits. This type of memory seems to be interesting for programmable applications in order to limit configuration time and power consumption required at each power up of the device. FPGA configuration memory is distributed all over the device and each point has to be readable independently from each other, that is why the approach is different from the classical memory array one. In this paper a first FPGA architecture based on MTJ-SRAM cells is described.

Published in:

Field Programmable Logic and Applications, 2005. International Conference on

Date of Conference:

24-26 Aug. 2005

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.