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Field-plated 0.25 μm gate-length AlGaN/GaN HEMTs on 6H-SiC with power density of 9.1 W/mm at 18 GHz

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6 Author(s)
Kumar, V. ; Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA ; Chen, G. ; Guo, S. ; Peres, B.
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MOCVD-grown field-plated 0.25 μm gate-length AlGaN/GaN high electron mobility transistors (HEMTs) have been fabricated on 6H-SiC substrates. The devices exhibited maximum drain current density as high as 1.42 A/mm, peak extrinsic transconductance of 437 mS/mm, unity current gain cutoff frequency (fT) of 41 GHz, and maximum frequency of oscillation (fmax) of 63 GHz. At 18 GHz, a continuous-wave output power density of 9.1 W/mm with power-added-efficiency (PAE) of 23.7% was obtained, yielding the highest reported power performance of AlGaN/GaN HEMTs at 18 GHz.

Published in:

Electronics Letters  (Volume:41 ,  Issue: 19 )