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Room-temperature continuous-wave operation of GaInNAsSb laser diodes at 1.55 μm

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8 Author(s)
J. A. Gupta ; Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada ; P. J. Barrios ; X. Zhang ; J. Lapointe
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The first 1.55 μm room-temperature continuous-wave (CW) operation of GaAs-based laser diodes utilising GaInNAsSb/GaNAs double quantum well active regions grown by molecular beam epitaxy is reported. In electrically-pumped CW operation the narrow ridge waveguide devices have a room temperature lasing wavelength of 1550 nm near threshold, increasing to 1553 nm at thermal rollover. The CW threshold current was 132 mA for a 3×589 μm device, with a characteristic temperature of 83 K, measured in pulsed mode between 20 and 70°C.

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Electronics Letters  (Volume:41 ,  Issue: 19 )