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In this letter, the authors demonstrate a wavelength flexible platform for the production of long-wavelength vertical-cavity surface-emitting lasers which provide full wavelength coverage from 1.3-1.6 μm. All-epitaxial InP-based devices with AsSb-based distributed Bragg reflectors were achieved through a common design, process, and growth technology at both the important telecommunications wavelengths of 1.3 and 1.5 μm. Thin selectively etched tunnel junctions were implemented as low-loss apertures and offer scalability to small device dimensions. Devices showed low threshold currents (<2 mA), near single-mode (SMSR>20 dB) operation, and high differential efficiency (>40% at 1.3 μm and >25% at 1.5 μm).