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Impurity free vacancy disordering (JFVD) is one of the most promising interdiffusion techniques for device application which has been studied extensively in recent years. In this work, we review the method of applying different dielectric capping layers for promoting or suppressing IFVD in both quantum well and quantum dot structures. The mechanism of interdiffusion process based on group HI vacancy generation and diffusion was introduced and discussed to explain the different effects created by the capping layers. It is demonstrated that using this method, different band gap energies across the same wafer can be achieved, which is essential for optoelectronic/photonic integrated circuits.