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Effect of body contacts on high-speed circuits in 90 nm CMOS SOI technology

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5 Author(s)
Weiss, J.R.M. ; IBM Zurich Res. Lab., Ruschlikon, Switzerland ; Menolfi, C. ; Morf, T. ; Schmatz, M.L.
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Silicon-on-insulator (SOI) technology has been successfully used for very high performance VLSI circuits for a few years now. These processes employ partially depleted FET devices with floating bodies. To avoid a time-dependent behavior of these devices in sensitive circuitry, selected bodies can optionally be tied to a controlled potential by means of body contacts. The device then is no longer affected by trapped charges within the channel, thus preventing signal-pattern-dependent variations in Vr. The effect of such body contacts on two representative circuits, a CML buffer and a distributed amplifier, has been studied. It is shown that the introduction of body contacts reduces the bandwidth, increases the jitter but also increases the gain of amplifier circuits.

Published in:

Signals, Circuits and Systems, 2005. ISSCS 2005. International Symposium on  (Volume:2 )

Date of Conference:

14-15 July 2005