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Silicon-on-insulator (SOI) technology has been successfully used for very high performance VLSI circuits for a few years now. These processes employ partially depleted FET devices with floating bodies. To avoid a time-dependent behavior of these devices in sensitive circuitry, selected bodies can optionally be tied to a controlled potential by means of body contacts. The device then is no longer affected by trapped charges within the channel, thus preventing signal-pattern-dependent variations in Vr. The effect of such body contacts on two representative circuits, a CML buffer and a distributed amplifier, has been studied. It is shown that the introduction of body contacts reduces the bandwidth, increases the jitter but also increases the gain of amplifier circuits.
Signals, Circuits and Systems, 2005. ISSCS 2005. International Symposium on (Volume:2 )
Date of Conference: 14-15 July 2005