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Nitride-based light-emitting diodes with p-AlInGaN surface layers

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7 Author(s)
Kuo, C.H. ; Inst. of Opt. Sci., Nat. Central Univ., Chung-li, Taiwan ; Lin, C.C. ; Chang, S.J. ; Hsu, Y.P.
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We have prepared bulk p-AlInGaN layers and light-emitting diodes (LEDs) with p-AlInGaN surface layers by metal-organic chemical vapor deposition. By properly control the TMAl and TMIn flow rates, we could match the lattice constant of p-AlInGaN to that of GaN. It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.

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Electron Devices, IEEE Transactions on  (Volume:52 ,  Issue: 10 )