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A new backscattering model giving a description of the quasi-ballistic transport in nano-MOSFET

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8 Author(s)
Fuchs, E. ; STMicroelectron., Crolles, France ; Dollfus, P. ; Le Carval, G. ; Barraud, S.
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A backscattering model suitable for compact modeling of nanoscale MOSFET is developed within the Landauer flux-scattering theory. To describe the quasi-ballistic transport, a new backscattering model based on the accurate determination of ballistic and backscattering probabilities along the channel is developed. This model is based on a careful analysis of transport in device using Monte Carlo simulation. This model allows us to display the main physical quantities along the channel and to accurately describe the quasi-ballistic transport and its effects on current-voltage characteristics.

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Electron Devices, IEEE Transactions on  (Volume:52 ,  Issue: 10 )