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Physical insights regarding design and performance of independent-gate FinFETs

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4 Author(s)
Weimin Zhang ; Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA ; Fossum, J.G. ; Mathew, L. ; Du, Y.

Important physical insights regarding the design and performance of independent-gate FinFETs, e.g., the MIGFET , are gained from measured data and predictions from our process/physics-based double-gate (DG) MOSFET model (UFDG) in Spice3. Inversion charge-centroid shifting, modulated by gate biases as well as by quantum-confinement and short-channel effects, underlies the sensitivity of the MIGFET (front-gate) threshold voltage to the back-gate bias. MIGFET design and operation-mode options are examined for optimizing circuit applications. Further, novel design of a single-device RF mixer and a double-balanced counterpart using MIGFETs is studied with UFDG/Spice3. Reasonably good MIGFET mixers, with regard to conversion gain and linearity with small-size/low-voltage/low-power requirements, can be achieved with optimal biases on the two gates and good design of the MIGFET structure.

Published in:

Electron Devices, IEEE Transactions on  (Volume:52 ,  Issue: 10 )

Date of Publication:

Oct. 2005

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